BSIM4 AND MOSFET MODELING FOR IC SIMULATION PDF

This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).

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Physical description xix, p. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

Source and drain of a transistor with multiple gate fingers. ISBN electronic bk. Non-quasi-static and parasitic gate and body resistances.

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Imprint Singapore ; Hackensack, N. Fringing and overlap capacitances. BSIM – the beginning.

BSIM4 and MOSFET modeling for IC simulation [electronic resource] in SearchWorks catalog

Skip to search Skip to main content. Source and drain parasitics: Gate and fog geometries and materials. Composite stamps for transient NQS model. Charge and capacitance models. Output resistance in saturation region.

Velocity saturation and velocity overshoot. Available to subscribing institutions. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented bim4 be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.

World Scientific Full view.

Review of the charge-deficit transient NQS model. Single continuous channel charge model. Diode temperature-dependence model [4].

Publication date Series International series on advances in solid state electronics and technology Reproduction Electronic reproduction. Channel DC current and output resistance. Physical mechanisms of diode DC currents. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits.

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SearchWorks Catalog

BSIM4 channel thermal noise models. BSIM4 snd noise models. Junction diode IV and CV models. Bibliography Includes bibliographical references and index. Connections of a multi-transistor stack. Source and drain area and perimeter calculation.

BSIM4 and MOSFET Modeling For IC Simulation

Circuit simulation and compact models. BSIM4 diode charge and capacitance [4].

Gate direct-tunneling current theory and model. Find it at other libraries via WorldCat Limited preview. Time discretization, equation linearization and matrix stamping. Nielsen Book Data BSIM4 junction leakage due to trap-assisted tunneling [4]. Gate direct-tunneling and body currents. The intent of this book ch.

World Scientific Publishing Co. Source and drain contact scenarios and diffusion resistances. Gate intrinsic-input resistance for non-quasi-static modeling.